MJD45H11:Complementary power transistors

These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications.

Key Features

  • Low collector-emitter saturation voltage
  • Fast switching speed
  • Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")
Product Specifications
DescriptionVersionSize
DS1232: Complementary power transistors4.1395 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
MJD45H11T4DPAKTape And Reel0.25500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
MJD45H11T4DPAKIndustrialEcopack2 (**)
Complementary power transistors MJD45H11