PD20015-E：15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC european directive
Product Specifications
Application Notes
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD20015-E | PowerSO-10RF (formed lead) | Tube | - | - | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD20015-E | PowerSO-10RF (formed lead) | Industrial | Ecopack2 | |
