PD54003L-E:RF Power LDMOS transistor

The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD54003L-E’s superior linearity performances makes it an ideal solution for car mobile radio.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT =3 W mith 20dB gain@500 MHz
  • New leadless plastic package
  • ESD protection
  • Supplied in tape and reel of 3 K units
  • In compliance with 2002/95/EC european directive
Product Specifications
DescriptionVersionSize
DS4574: RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs3.1195 KB
Application Notes
DescriptionVersionSize
AN2657: An innovative verilog model for predicting LDMOS DC, small and large signal behavior1.3285 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Product Evaluation Tools
Part NumberManufacturerDescription
STEVAL-TDR001V14 W / 380 - 512 MHz reference design using PD84001 + PD54003L-E + LPF
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
PD54003L-E--PowerFLAT 5x5 HVTape And ReelNECEAR99MALAYSIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
PD54003L-EPowerFLAT 5x5 HVIndustrialEcopack2
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs PD54003L-E
An innovative verilog model for predicting LDMOS DC, small and large signal behavior PD54003L-E