PD55008L-E:8W 12.5V 500MHz LDMOS in PowerFLAT plastic package

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz.

PD55008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD55008LE’s superior linearity performance makes it an ideal solution for car mobile radio.

Key Features

  • In compliance with 2002/95/EC european directive
  • Supplied in tape and reel of 3K units
  • Excellent thermal stability
  • POUT = 8W with 17dB gain @ 500MHz / 12.5V
  • Common source configuration
  • New leadless plastic package
  • Integrated ESD protection
Product Specifications
DescriptionVersionSize
DS4701: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs2.3187 KB
HW Model & CAD Libraries
DescriptionVersionSize
PD55008L-E ADS model1.0656 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
PD55008L-EPowerFLAT 5x5 HVTape And Reel--NECEAR99MALAYSIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
PD55008L-EPowerFLAT 5x5 HVIndustrialEcopack2
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs PD55008L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs PD55008L-E