PD57002-E：2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package
Product Specifications
Application Notes
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Product Evaluation Tools
| Part Number | Manufacturer | Description |
|---|
| STEVAL-TDR007V1 | | 200 W / 1030 MHz IFF Mode-S reference design using PD57002-E, PD57018-E and 2x PD57060-E |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD57002-E | - | - | PowerSO-10RF (formed lead) | Tube | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD57002-E | PowerSO-10RF (formed lead) | Industrial | Ecopack2 | |
