PD84006-E:RF Power LDMOS transistor

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC European directive
Product Specifications
DescriptionVersionSize
DS6422: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs2.1208 KB
Application Notes
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
PD84006-E--PowerSO-10RF (formed lead)TubeNECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
PD84006-EPowerSO-10RF (formed lead)IndustrialEcopack2
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs PD84006-E
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