PD84006L-E：RF Power LDMOS transistor
The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.
PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.
Key Features
- Excellent thermal stability
- Common source configuration
- Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz
- Plastic package
- ESD protection
- Supplied in tape and reel
- In compliance with the 2002/95/EC european directive
Product Specifications
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Product Evaluation Tools
| Part Number | Manufacturer | Description |
|---|
| STEVAL-TDR020V1 | | 4 W, 740 - 950 MHz evaluation board based on PD84006L-E |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD84006L-E | - | - | PowerFLAT 5x5 HV | Tape And Reel | NEC | EAR99 | MALAYSIA |
Quality & Reliability
