SD56120：120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.
Key Features
- Excellent thermal stability
- POUT
= 100W with 14dB gain @ 860MHz
- Common source configuration Push-pull
- BeO free package
Product Specifications
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| SD56120 | - | - | M246 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| SD56120 | M246 | Industrial | Ecopack1 | |
