STAC250V2-500E:600 W, 250 V SuperDMOS transistor

The STAC250V2-500E uses the latest RF Power SuperDMOS technology specially designed for 150 V and 250 V industrial RF power Class-AB, C, D and E generators such as PECVD, plasma sputtering, flat panel and solar cell manufacturing equipment. The STAC250V2-500E benefits from the latest generation of STAC® air cavity packaging, which exhibits a 25% lower thermal resistance compared to equivalent ceramic packages.

Key Features

  • Operating frequency up to 27 MHz
  • POUT = 600 W typ. with 23 dB gain @ 13.56 MHz/250 V
  • Designed for Class-AB, C, D and E operation
  • V(BR)DSS > 1000 V
  • Housed in STAC® package, using air cavity packaging technology
  • In compliance with the 2002/95/EC1 European Directive
Product Specifications
DescriptionVersionSize
DS10244: 600 W, 250 V SuperDMOS transistor6.0449 KB
HW Model & CAD Libraries
DescriptionVersionSize
STAC250V2-500E ADS model1.0250 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberQuantityUnit Price (US$) *PackagePacking TypeOperating Temperature (°C) (min)Operating Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STAC250V2-500E100066STAC177BLoose Piece--NECEAR99-
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STAC250V2-500ESTAC177BIndustrialEcopack1
600 W, 250 V SuperDMOS transistor STAC250V2-500E
600 W, 250 V SuperDMOS transistor STAC250V2-500E