STAC2932B:300W - 50V HF/VHF DMOS in STAC244 Boltdown package

The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz.

The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC

Key Features

  • Gold metallization
  • Excellent thermal stability
  • Common source push-pull configuration
  • POUT = 300 W min. with 20 dB gain @ 175 MHz
  • In compliance with the 2002/95/EC European directive
  • ST air cavity packaging technology - STAC™ package
Product Specifications
DescriptionVersionSize
DS6155: HF/VHF/UHF RF power N-channel MOSFETs6.0458 KB
Application Notes
DescriptionVersionSize
AN3232: Mounting recommendations for STAC® and STAP® boltdown packages4.01 MB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STAC2932BWSTAC244BLoose Piece--NECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STAC2932BWSTAC244BIndustrialEcopack1
HF/VHF/UHF RF power N-channel MOSFETs STAC2932B
Mounting recommendations for STAC® and STAP® boltdown packages STAC0912-250