STAC4932F：1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC Flangeless package
The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.
The STAC4932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC®.
Key Features
- Excellent thermal stability
- Common source push-pull configuration
- POUT
= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
- Pulse conditions: 1 msec - 10%
- In compliance with the 2002/95/EC European directive
- ST air cavity packaging technology - STAC®
package
Product Specifications
Application Notes
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STAC4932F | 1000 | 67.9 | STAC244F | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STAC4932F | STAC244F | Industrial | Ecopack1 | |
