STB11NM80:N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D2PAK

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on) *Qg in the industry
Product Specifications
DescriptionVersionSize
DS3013: N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-24711.1904 KB
Application Notes
DescriptionVersionSize
AN4250: Fishbone diagram for power factor correction1.1772 KB
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN2842: Paralleling of power MOSFETs in PFC topology1.4896 KB
AN2344: Power MOSFET avalanche characteristics and ratings1.3880 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
Technical Notes & Articles
DescriptionVersionSize
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products1.0657 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STB11NM80T4 PSpice model (.lib)1.0958 bytes
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STB11NM80T4D2PAKTape And Reel--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STB11NM80T4D2PAKIndustrialEcopack2
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 STP11NM80
Fishbone diagram for power factor correction STWA3N170
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
Paralleling of power MOSFETs in PFC topology STWA3N170
Power MOSFET avalanche characteristics and ratings STWA3N170
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products STWA3N170
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STB11NM80
Very low drop voltage regulators with inhibit KFXX