STD15P6F6AG:Automotive-grade P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS11317: Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package1.0637 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD15P6F6AG PSpice model1.03 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD15P6F6AGDPAKTape And Reel0.781000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD15P6F6AGDPAKAutomotiveEcopack1md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-6p6aa62.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-6p6aa62.xml
Datasheet
Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package STD15P6F6AG
Other
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-6p6aa62.pdf STD15P6F6AG
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-6p6aa62.xml STD15P6F6AG
Spice model tutorial for Power MOSFETs STD15P6F6AG
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX