STD20P3H6AG：Automotive-grade P-channel -30 V, 33 mOhm typ., -20 A STripFET F6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS11277: Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A STripFET™ F6 Power MOSFET in a DPAK package1.0723 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD20P3H6AG PSpice model1.09 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD20P3H6AGDPAKTape And Reel0.61000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD20P3H6AGDPAKAutomotiveEcopack1
Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A STripFET™ F6 Power MOSFET in a DPAK package STD20P3H6AG
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD20P3H6AG
Very low drop voltage regulators with inhibit KFXX
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