STD28P3LLH6AG：Automotive-grade P-channel -30 V, 0.027 Ohm typ., -12 A, STripFET H6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
  • Logic level
Product Specifications
DescriptionVersionSize
DS11289: Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package1.0715 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD28P3LLH6AG PSpice model1.09 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD28P3LLH6AGDPAKTape And Reel0.751000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD28P3LLH6AGDPAKAutomotiveEcopack1
Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package STD28P3LLH6AG
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD28P3LLH6AG
Very low drop voltage regulators with inhibit KFXX
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