STD52P3LLH6：P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS10148: P-channel 30 V, 0.01 Ω typ., 52 A, STripFET™ H6 Power MOSFET in a DPAK package2.0772 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD52P3LLH6 PSpice model1.08 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD52P3LLH6DPAKTape And Reel1.251000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD52P3LLH6DPAKIndustrialEcopack2
P-channel 30 V, 0.01 Ω typ., 52 A, STripFET™ H6 Power MOSFET in a DPAK package STD52P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD52P3LLH6
Very low drop voltage regulators with inhibit KFXX
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