STFI11N60M2-EP：N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a I2PAKFP package
This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip layout and an improved vertical structure,
the device exhibits low on-resistance, optimized switching characteristics with very low
turn-off switching losses, rendering it suitable for the most demanding very high
frequency converters.
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS
) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STFI11N60M2-EP | I2PAKFP | Tube | 1.1 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STFI11N60M2-EP | I2PAKFP | Industrial | Ecopack2 | |
