STGD19N40LZ：Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
Key Features
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC
= 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Product Specifications
Application Notes
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | Eoff
(mJ) (typ) (@ Tc = 125 °C) | PTOT
(W) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGD19N40LZ | DPAK | Tape And Reel | - | 1000 | - | 125 | NEC | EAR99 | CHINA |
Quality & Reliability
