STGFW30H65FB：Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.55 V (typ.) @ IC
= 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
Product Specifications
Application Notes
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGFW30H65FB | TO-3PF | Tube | 2.8 | 1000 | NEC | EAR99 | KOREA (south) |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGFW30H65FB | TO-3PF | Industrial | Ecopack1 | |
