STGW40H65DFB-4：Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
This device is an IGBT developed using an advanced proprietary trench gate field-stop
structure. The device is part of the new HB series of IGBTs, which represents an optimum
compromise between conduction and switching loss to maximize the efficiency of any
frequency converter. A faster switching event can be achieved by the Kelvin pin, which
separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution
result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- Kelvin pin
- Minimized tail current
- Low saturation voltage: VCE(sat)
= 1.6 V (typ.) @ IC
= 40 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Product Specifications
Application Notes
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGW40H65DFB-4 | TO247-4 | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGW40H65DFB-4 | TO247-4 | Industrial | Ecopack2 | |
