STGWT20IH125DF：1250 V, 20 A IH series trench gate field-stop IGBT
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
Key Features
- Designed for soft commutation only
- Maximum junction temperature: TJ
= 175 °C
- Minimized tail current
- VCE(sat)
= 2.0 V (typ.) @ IC
= 15 A
- Tight parameters distribution
- Safe paralleling
- Very low VF
soft recovery co-packaged diode
- Low thermal resistance
- Lead free package
Product Specifications
Application Notes
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWT20IH125DF | TO-3P | Tube | 2.78 | 1000 | NEC | EAR99 | - |
Quality & Reliability
