STH110N10F7-2：N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss /Ciss ratio for EMI immunity
High avalanche ruggedness

Product Specifications

Description	Version	Size
DS9403: N-channel 100 V, 4.9 mΩ typ., 110 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages	4.0	858 KB

Application Notes

Description	Version	Size
AN3267: Impact of power MOSFET VGS on buck converter performance	1.2	1 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance	1.1	1006 KB
AN4191: Power MOSFET: Rg impact on applications	1.1	1 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies	1.1	1 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	346 KB

User Manuals

Description	Version	Size
UM1575: Spice model tutorial for Power MOSFETs	1.3	1 MB

Brochures

Description	Version	Size
Brochure Power management guide	05.2016	4 MB

Software Development Tools

Part Number	Manufacturer	Description
ST-MOSFET-FINDER	ST	MOSFET product finder application for Android and iOS

Sample & Buy

Part Number	Package	Packing Type	Unit Price (US$) *	Quantity	ECCN (EU)	ECCN (US)	Country of Origin
STH110N10F7-2	H2PAK-2	Tape And Reel	2.8	1000	NEC	EAR99	CHINA

Quality & Reliability

Part Number	Package	Grade	RoHS Compliance Grade	Material Declaration**
STH110N10F7-2	H2PAK-2	Industrial	Ecopack1	md_h2pak-wspc-hc-wspc-2-3-wspc-leads_r1(9-wspc-od0tj52_vers2_sdm_signed.pdf md_h2pak-wspc-hc-wspc-2-3-wspc-leads_r1(9-wspc-od0tj52_vers2_sdm.xml

N-channel 100 V, 4.9 mΩ typ., 110 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages STH110N10F7-6

Impact of power MOSFET VGS on buck converter performance STL8DN6LF3

Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6

Power MOSFET: Rg impact on applications STL8DN6LF3

ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3

The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6

Spice model tutorial for Power MOSFETs SCTWA50N120

Very low drop voltage regulators with inhibit KFXX

md_h2pak-wspc-hc-wspc-2-3-wspc-leads_r1(9-wspc-od0tj52_vers2_sdm_signed.pdf STH110N10F7-2

md_h2pak-wspc-hc-wspc-2-3-wspc-leads_r1(9-wspc-od0tj52_vers2_sdm.xml STH110N10F7-2