STH240N10F7-6：N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package

These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

Ultra low on-resistance
100% avalanche tested

Product Specifications

Description	Version	Size
DS10259: N-channel 100 V, 0.002 Ω typ., 180 A STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages	2.0	768 KB

Application Notes

Description	Version	Size
AN3267: Impact of power MOSFET VGS on buck converter performance	1.2	1 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance	1.1	1006 KB
AN4191: Power MOSFET: Rg impact on applications	1.1	1 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies	1.1	1 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters	1.1	346 KB

User Manuals

Description	Version	Size
UM1575: Spice model tutorial for Power MOSFETs	1.3	1 MB

HW Model & CAD Libraries

Description	Version	Size
STH240N10F7-6 PSpice model	1.0	10 KB

Brochures

Description	Version	Size
Brochure Power management guide	05.2016	4 MB

Software Development Tools

Part Number	Manufacturer	Description
ST-MOSFET-FINDER	ST	MOSFET product finder application for Android and iOS

Sample & Buy

Part Number	Package	Packing Type	Unit Price (US$) *	Quantity	ECCN (EU)	ECCN (US)	Country of Origin
STH240N10F7-6	H2PAK-6	Tape And Reel	-	-	NEC	EAR99	CHINA

Quality & Reliability

Part Number	Package	Grade	RoHS Compliance Grade	Material Declaration**
STH240N10F7-6	H2PAK-6	Industrial	Ecopack1	md_(4-wspc-h2pak-wspc-6-wspc-leads_r2(4-wspc-od0jb52.pdf md_(4-wspc-h2pak-wspc-6-wspc-leads_r2(4-wspc-od0jb52.xml

N-channel 100 V, 0.002 Ω typ., 180 A STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages STH240N10F7-6

Impact of power MOSFET VGS on buck converter performance STL8DN6LF3

Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6

Power MOSFET: Rg impact on applications STL8DN6LF3

ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3

The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6

Spice model tutorial for Power MOSFETs SCTWA50N120

Spice model tutorial for Power MOSFETs STH240N10F7-6

Very low drop voltage regulators with inhibit KFXX

md_(4-wspc-h2pak-wspc-6-wspc-leads_r2(4-wspc-od0jb52.pdf STH240N10F7-6

md_(4-wspc-h2pak-wspc-6-wspc-leads_r2(4-wspc-od0jb52.xml STH240N10F7-6