STH320N4F6-2:N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.
Key Features
- Standard threshold drive
- 100% avalanche tested
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
---|
ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STH320N4F6-2 | H2PAK-2 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|
STH320N4F6-2 | H2PAK-2 | Automotive | Ecopack1 | |