STL128DN:High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

Key Features

  • Integrated antiparallel collector-emitter diode
  • High voltage capability
  • Minimum lot-to-lot spread for reliable operation
  • Low spread of dynamic parameters
  • Large RBSOA
  • Very high switching speed
Product Specifications
DescriptionVersionSize
DS5518: High voltage fast-switching NPN power transistor3.1417 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STLD128DNT4DPAKTape And Reel0.27500NECEAR99CHINA
STL128DNTO-220ABTube--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STLD128DNT4DPAKIndustrialEcopack2
STL128DNTO-220ABIndustrialEcopack2
High voltage fast-switching NPN power transistor STL128DN