STL128DN：High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
Key Features
- Integrated antiparallel collector-emitter diode
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Low spread of dynamic parameters
- Large RBSOA
- Very high switching speed
Product Specifications
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STLD128DNT4 | DPAK | Tape And Reel | 0.27 | 500 | NEC | EAR99 | CHINA |
| STL128DN | TO-220AB | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STLD128DNT4 | DPAK | Industrial | Ecopack2 | |
| STL128DN | TO-220AB | Industrial | Ecopack2 | |
