STL19N60M2：N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
This device is an N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss
) profile
- 100% avalanche tested
- Zener-protected
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STL19N60M2 | PowerFLAT 8x8 HV | Tape And Reel | 1.48 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
