STL4P2UH7:P-channel 20 V, 0.087 Ohm typ., 4 A STripFET H7 Power MOSFET in a PowerFLAT 2x2 package

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

Key Features

  • Ultra logic level
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses
Product Specifications
DescriptionVersionSize
DS9839: P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package3.0420 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STL4P2UH7 PSpice model1.02 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL4P2UH7PowerFLAT 2x2Tape And Reel0.221000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STL4P2UH7PowerFLAT 2x2IndustrialEcopack2md_a0l6-wspc-qfn-wspc-power-wspc-flat-wspc-2x2-wspc-6l_csl6np21bnf.pdf
md_a0l6-wspc-qfn-wspc-power-wspc-flat-wspc-2x2-wspc-6l_csl6np21bnf.xml
Datasheet
P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package STL4P2UH7
Other
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
md_a0l6-wspc-qfn-wspc-power-wspc-flat-wspc-2x2-wspc-6l_csl6np21bnf.pdf STL4P2UH7
md_a0l6-wspc-qfn-wspc-power-wspc-flat-wspc-2x2-wspc-6l_csl6np21bnf.xml STL4P2UH7
Spice model tutorial for Power MOSFETs STL4P2UH7
Spice model tutorial for Power MOSFETs SCTWA50N120
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