STL60N10F7:N-channel 100 V, 0.013 Ohm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key Features

  • Ultra low on-resistance
  • 100% avalanche tested
Product Specifications
DescriptionVersionSize
DS9584: N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package3.01 MB
Application Notes
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance1.11006 KB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STL60N10F7 PSpice model1.03 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL60N10F7PowerFLAT 5x6Tape And Reel11000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STL60N10F7PowerFLAT 5x6IndustrialEcopack2md_a0er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r2er-wspc-od0cj52.pdf
md_a0er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r2er-wspc-od0cj52.xml
Datasheet
N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package STL60N10F7
Other
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6
md_a0er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r2er-wspc-od0cj52.pdf STL60N10F7
md_a0er-wspc-power-wspc-flat-wspc-5x6-wspc-8l-wspc-single_r2er-wspc-od0cj52.xml STL60N10F7
Spice model tutorial for Power MOSFETs STL60N10F7
Spice model tutorial for Power MOSFETs SCTWA50N120
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