STP110N55F6：N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on)in all packages.

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness
Product Specifications
DescriptionVersionSize
DS7316: N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6 Power MOSFET in a TO-220 package2.0647 KB
Application Notes
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STP110N55F6TO-220ABTube11000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STP110N55F6TO-220ABIndustrialEcopack2
N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6 Power MOSFET in a TO-220 package STP110N55F6
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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