STP165N10F4:N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2;2; DeepGATE͐2;2; Power MOSFET

The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance.

Key Features

  • N-channel enhancement mode
  • 100% avalanche rated
  • Low gate charge
  • Very low on-resistance
Product Specifications
DescriptionVersionSize
DS6304: N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET2.1674 KB
Application Notes
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STP165N10F4TO-220ABTube--NECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STP165N10F4TO-220ABIndustrialEcopack2
Datasheet
N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET STP165N10F4
Other
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX