STP265N6F6AG：Automotive-grade N-channel 60 V, 2.3 mOhm typ., 180 A STripFET F6 Power MOSFET in TO-220 package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS10772: Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package3.0628 KB
Application Notes
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STP265N6F6AGTO-220ABTube--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STP265N6F6AGTO-220ABAutomotiveEcopack1
Datasheet
Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package STP265N6F6AG
Other
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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