STPSC10H12-Y:Automotive grade 1200 V power Schottky silicon carbide diode

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
Product Specifications
DescriptionVersionSize
DS11653: Automotive grade 1200 V power Schottky silicon carbide diode1.0403 KB
Application Notes
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
Flyers
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Conference Papers
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
Part NumberManufacturerDescription
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
Sample & Buy
Part NumberUnit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC10H12DY--TO-220ACTube175NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC10H12DYTO-220ACAutomotiveEcopack2