STPSC406:600 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC boost diode
Product Specifications
DescriptionVersionSize
DS6481: 600 V power Schottky silicon carbide diode2.0138 KB
Application Notes
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
Presentations
DescriptionVersionSize
ST products and solutions for solar energy5.12 MB
Silicon-carbide diode product presentation1.01022 KB
Flyers
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
Selection Guides
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Products and solutions for solar energy1.01 MB
Conference Papers
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
Part NumberManufacturerDescription
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
Sample & Buy
Part NumberUnit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC406B-TR0.76100DPAKTape And Reel175NECEAR99CHINA
STPSC406D0.8100TO-220ACTube175NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC406B-TRDPAKIndustrialEcopack1md_dp-wspc-to-wspc-252-wspc-dpak_7zdp-wspc-dc06y13.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_7zdp-wspc-dc06y13.xml
STPSC406DTO-220ACIndustrialEcopack2md_dk-wspc-do-wspc-220_hsdk-wspc-dc061y3.pdf
md_dk-wspc-do-wspc-220_hsdk-wspc-dc061y3.xml
600 V power Schottky silicon carbide diode STPSC406
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
STEVAL-ISV006V2: solar battery charger using the SPV1040 STEVAL-ISV006V2
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STTH15S12
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
Spice model tutorial for Power MOSFETs SCTWA50N120
md_dp-wspc-to-wspc-252-wspc-dpak_7zdp-wspc-dc06y13.pdf STPSC406
md_dp-wspc-to-wspc-252-wspc-dpak_7zdp-wspc-dc06y13.xml STPSC406
md_dk-wspc-do-wspc-220_hsdk-wspc-dc061y3.pdf STPSC406
md_dk-wspc-do-wspc-220_hsdk-wspc-dc061y3.xml STPSC406