STS10P3LLH6：P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS10150: P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6 Power MOSFET in an SO-8 package5.0662 KB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STS10P3LLH6 PSpice model1.03 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STS10P3LLH6SO-8Tape And Reel1.151000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STS10P3LLH6SO-8IndustrialEcopack2
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6 Power MOSFET in an SO-8 package STS10P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STS10P3LLH6
Very low drop voltage regulators with inhibit KFXX
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