STS5P3LLH6：P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance RDS(on)
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS9648: P-channel 30 V, 0.048 Ω typ., 5 A STripFET™ H6 DeepGATE™ Power MOSFET in an SO-8 package2.0532 KB
Application Notes
DescriptionVersionSize
AN4391: New P-channel trench technology from ST for low power DC-DC conversions and load switching applications1.01 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STS5P3LLH6SO-8Tape And Reel0.651000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STS5P3LLH6SO-8IndustrialEcopack2
P-channel 30 V, 0.048 Ω typ., 5 A STripFET™ H6 DeepGATE™ Power MOSFET in an SO-8 package STS5P3LLH6
New P-channel trench technology from ST for low power DC-DC conversions and load switching applications STL6P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
Products 产品服务
Manufacturers 生产厂家
Sales 联系购买
©1993 - 2024 BDTIC