STS9D8NH3LL：Dual N-channel 30V - 0.012Y - 9A SO-8
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
Key Features
- Optimal RDS(on)
x Qg trade-off @ 4.5V
- Switching losses reduced
- Conduction losses reduced
Product Specifications
Application Notes
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STS9D8NH3LL | SO-8 | Tape And Reel | 0.66 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
