STU10P6F6：P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in IPAK package
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STU10P6F6 | IPAK | Tube | 0.78 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
