STU10P6F6：P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in IPAK package

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
Product Specifications
DescriptionVersionSize
DS8964: P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages5.01 MB
Application Notes
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STU10P6F6 PSpice model1.08 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STU10P6F6IPAKTube0.781000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STU10P6F6IPAKIndustrialEcopack2md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm_signed.pdf
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm.xml
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages STU10P6F6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STU10P6F6
Very low drop voltage regulators with inhibit KFXX
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm_signed.pdf STU10P6F6
md_ik-wspc-ipak-wspc-to-251_tlik-wspc-6p6ab63_vers2_sdm.xml STU10P6F6
Products 产品服务
Manufacturers 生产厂家
Sales 联系购买
©1993 - 2024 BDTIC