STW9N150：N-channel 1500V - 2.2Ohm - 8A - TO-247
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Key Features
- Very low on-resistance
- 100% avalanche tested
- Gate charge minimized
- Avalanche ruggedness
- High speed switching
- Very low intrinsic capacitances
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STW9N150 | TO-247 | Tube | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
