TIP35CP:COMPLEMENTARY HIGH POWER TRANSISTORS

The devices are manufactured in planar technology with \"base island\" layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage
  • Complementary NPN-PNP transistors
Product Specifications
DescriptionVersionSize
DS5819: Complementary power transistors2.2192 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
TIP35CPTO-3PTube0.858500NECEAR99KOREA (south)
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
TIP35CPTO-3PIndustrialEcopack1
Complementary power transistors TIP35CP