2SC4215 Radio-frequency bipolar transistor

DataSheet
Feature
Application ScopeFM band high frequency amplifier
PolarityNPN
Number of Circuits1
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameUSM
JEITASC-70
Package CodeSOT-323
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.02A
Collector power dissipationPC100mW
Junction temperatureTj125degC
Collector-emitter voltageVCEO30V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=0.1GHz23dB
Transition frequency (Typ.)fT-0.55GHz
Noise Figure (Typ.)NFf=0.1GHz2dB
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
2SC4215-Y(TE85L,F)Japan3000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
TTC4116FU