DataSheetFeature| Polarity | N-ch |
|---|
| Generation | L²-π-MOSⅤ |
|---|
| RoHS Compatible Product(s) (#) | Available |
|---|
| Assembly bases | Japan |
|---|
Package Information| Package Image |  |
|---|
| Toshiba Package Name | TO-3P(N) |
|---|
| JEITA | SC-65 |
|---|
| Pins | 3 |
|---|
| Mounting | Through Hole |
|---|
| Absolute Maximum Ratings| Characteristics | Symbol | Rating | Unit |
|---|
|
| Drain current | ID | 60 | A | | Power Dissipation | PD | 150 | W | | Drain-Source voltage | VDSS | 60 | V | | Drain-Source voltage | VDSS | 60 | V |
Electrical Characteristics| Characteristics | Symbol | Condition | Value | Unit |
|---|
|
| Total gate charge (Typ.) | Qg | - | 170 | nC | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 0.015 | Ω | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 0.011 | Ω |
|
