2SK2313 Power MOSFET (N-ch single 30V《VDSS≤60V)

DataSheet
Feature
PolarityN-ch
GenerationL²-π-MOSⅤ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTO-3P(N)
JEITASC-65
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID60A
Power DissipationPD150W
Drain-Source voltageVDSS60V
Drain-Source voltageVDSS60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-170nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4V0.015Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.011Ω
Documents
PSpicePSpice Model[Feb,2016](lib: 3KB)
Reliability InformationReliability Data[Mar,2013](PDF: 87KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TTC0001