2SK2313 Power MOSFET (N-ch single 30V《VDSS≤60V) _ BDTIC 中国领先电子元器件代理商

Characteristics	Symbol	Rating	Unit
Drain current	I_D	60	A
Power Dissipation	P_D	150	W
Drain-Source voltage	V_DSS	60	V
Drain-Source voltage	V_DSS	60	V

项目	符号	条件	数值	单位
Total gate charge (Typ.)	Q_g	-	170	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4V	0.015	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	0.011	Ω

PSpice	PSpice Model[Feb,2016]	(lib: 3KB)
Reliability Information	Reliability Data[Mar,2013]	(PDF: 87KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
相关技术数据	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
相关技术数据	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
相关技术数据	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
相关技术数据	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
相关技术数据	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)

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