MT4S300U Radio-frequency SiGe Heterojunction Bipolar Transistor

DataSheet
Feature
Application ScopeUHF/SHF band low noise amplifier
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameUSQ
Package CodeSOT-343
Pins4
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.05A
Collector power dissipationPC100mW
Collector power dissipation (mounted on board)PC250mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO4V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=2GHz16.9dB
Transition frequency (Typ.)fT-26.5GHz
Noise Figure (Typ.)NFf=2GHz0.55dB
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
MT4S300U(TE85L,O,FJapan3000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
2SC5088