TPC8229-H Power MOSFET (N-ch dual)

DataSheet
Feature
Application ScopeMotor drivers / Switching regulators
PolarityN-ch×2
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameSOP-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID3.2A
Drain currentID3.2A
Drain current (Q1)ID3.2A
Drain current (Q2)ID3.2A
Power DissipationPD1.5W
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltageVDSS80V
Drain-Source voltage (Q1)VDSS80V
Drain-Source voltage (Q2)VDSS80V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Q2) (Typ.)Qg-11nC
Total gate charge (Q1) (Typ.)Qg-11nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.087Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.080Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V0.087Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V0.080Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC8229-H,LQ(SChina2500yes
Documents
Reliability InformationReliability Data[Feb,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC8407