TPCF8003 Power MOSFET (N-ch single VDSS≤30V)

DataSheet
Feature
Application ScopeMobile equipments / Notebook PCs
PolarityN-ch
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID7A
Power DissipationPD2.5W
Drain-Source voltageVDSS20V
Drain-Source voltageVDSS20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-500pF
Total gate charge (Typ.)Qg-9.5nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.034Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.018Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCF8003,LF(CMMalaysia4000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 58KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003