TPCP8302 Power MOSFET (P-ch dual) _ BDTIC a Leading Distributor in China

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-5	A
Drain current	I_D	-5	A
Drain current (Q1)	I_D	-5	A
Drain current (Q2)	I_D	-5	A
Power Dissipation	P_D	1.48	W
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage (Q1)	V_DSS	-20	V
Drain-Source voltage (Q2)	V_DSS	-20	V

Characteristics	Symbol	Condition	Value	Unit
Total gate charge (Q2) (Typ.)	Q_g	-	20	nC
Total gate charge (Q1) (Typ.)	Q_g	-	20	nC
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-4V	0.033	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2.5V	0.045	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-1.8V	0.095	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4V	0.033	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.045	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-1.8V	0.095	Ω

Application Note	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
Application Note	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
Application Note	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
Application Note	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
Application Note	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)