TPCP8306 Power MOSFET (P-ch dual) _ BDTIC a Leading Distributor in China

TPCP8306 Power MOSFET (P-ch dual)

DataSheet

Download Japanese version(PDF:355KB)
Download English version(PDF:229KB)

Feature

Application Scope	Mobile equipments / Notebook PCs
Polarity	P-ch
Generation	U-MOSⅥ
RoHS Compatible Product(s) (#)	Available
Assembly bases	Malaysia

Package Information

Package Image
Toshiba Package Name	PS-8
Pins	8
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-4	A
Drain current	I_D	-4	A
Drain current (Q1)	I_D	-4	A
Drain current (Q2)	I_D	-4	A
Power Dissipation	P_D	1.48	W
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage (Q1)	V_DSS	-20	V
Drain-Source voltage (Q2)	V_DSS	-20	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Input capacitance (Q1) (Typ.)	C_iss	-	680	pF
Input capacitance (Q2) (Typ.)	C_iss	-	680	pF
Total gate charge (Q2) (Typ.)	Q_g	-	9.2	nC
Total gate charge (Q1) (Typ.)	Q_g	-	9.2	nC
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-4.5V	0.058	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2.5V	0.083	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2V	0.160	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-1.8V	0.265	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4.5V	0.058	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.083	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2V	0.160	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-1.8V	0.265	Ω

Order Information

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
TPCP8306,LF(CM	Malaysia	3000		yes

Documents

Reliability Information	Reliability Data[Dec,2014]	(PDF: 161KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Application Note	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
Application Note	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
Application Note	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
Application Note	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
Application Note	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)

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