TPCP8306 Power MOSFET (P-ch dual) _ BDTIC 中国领先电子元器件代理商

TPCP8306 Power MOSFET (P-ch dual)

数据手册DataSheet

日文版下载(PDF:355KB)Japanese
英文版下载(PDF:229KB)English

产品概述

Application Scope	Mobile equipments / Notebook PCs
Polarity	P-ch
Generation	U-MOSⅥ
RoHS Compatible Product(s) (#)	Available
Assembly bases	马来西亚

封装信息

Package Image
Toshiba Package Name	PS-8
Pins	8
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-4	A
Drain current	I_D	-4	A
Drain current (Q1)	I_D	-4	A
Drain current (Q2)	I_D	-4	A
Power Dissipation	P_D	1.48	W
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage	V_DSS	-20	V
Drain-Source voltage (Q1)	V_DSS	-20	V
Drain-Source voltage (Q2)	V_DSS	-20	V

产品特性

项目	符号	条件	数值	单位
Input capacitance (Q1) (Typ.)	C_iss	-	680	pF
Input capacitance (Q2) (Typ.)	C_iss	-	680	pF
Total gate charge (Q2) (Typ.)	Q_g	-	9.2	nC
Total gate charge (Q1) (Typ.)	Q_g	-	9.2	nC
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-4.5V	0.058	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2.5V	0.083	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-2V	0.160	Ω
Drain-Source on-resistance (Q1) (Max)	R_DS(ON)	V_GS=-1.8V	0.265	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-4.5V	0.058	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2.5V	0.083	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-2V	0.160	Ω
Drain-Source on-resistance (Q2) (Max)	R_DS(ON)	V_GS=-1.8V	0.265	Ω

订购型号

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
TPCP8306,LF(CM	Malaysia	3000		yes

技术资料

Reliability Information	Reliability Data[Dec,2014]	(PDF: 161KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
相关技术数据	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
相关技术数据	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
相关技术数据	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
相关技术数据	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
相关技术数据	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	MOSFETs[Mar,2016]	(PDF: 2526KB)
Catalog	Part Number List: MOSFETs[Mar,2016]	(PDF: 1295KB)

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