FJPF2145:ESBC™ Rated NPN Power Transistor

FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance whenused in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignitionswitches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.

技术特性
  • Low Equivalent On Resistance
  • Very Fast Switch: 150 kHz
  • Wide RBSOA: Up to 1100 V
  • Avalanche Rated
  • Low Driving Capacitance, no Miller Capacitance
  • Low Switching Losses
  • Reliable HV Switch: No False Triggering due to High dv/dt Transients
实物参考图

FJPF2145 实物参考图

订购信息 Ordering Information
产品 生态状况 价格 封装信息 封装标记规则 资格支持
FJPF2145TU 量产 $0.406 TO-220F 3L 示意图  第一行:$Y (飞兆徽标) 
&Z (工厂编码) 
3 (3 位日期代码) 
&K
第二行:J2145
RTHETA (JA) :  70.44  °C/W
RƟJC :  3.125  °C/W
Moisture Sensitivity Level (MSL) :  NA  
数据资料DataSheet下载
概述 文档编号 版本
ESBC™ Rated NPN Power Transistor FJPF2145 1