BGU8H1UK: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8H1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8H1UK requires one external matching inductor.

The BGU8H1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 16 dB gain at a noise figure of 0.9 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8H1UK is optimized for 2300 MHz to 2690 MHz.

数据手册 (1)
名称/描述Modified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 1.0) PDF (200.0 kB) BGU8H1UK [English]19 May 2015
应用说明 (1)
名称/描述Modified Date
BGU8H1UK LTE LNA evaluation board (REV 2.0) PDF (721.0 kB) AN11594 [English]24 Nov 2015
S-参数
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8H1UKActiveNAU0001.53.1160.9-52350
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGU8H1UKReel 13" Q1/T1 in DrypackActiveBGU8H1UKAZ (9340 690 52019)Standard MarkingBGU8H1UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8H1UK
BGU8H1UK LTE LNA evaluation board BGU8H1UK
BGU8H1UK S-parameter and Noise BGU8H1UK